![]() Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX, BUT11APX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 Â☌ unless otherwise specified SYMBOL, Product specification Silicon Diffused Power Transistor BUT11APX ICsat 90 % + 50v 100-200R, Power Transistor BUT11APX ICon 90 % VCEsat/V 2.0 IC 1.6 IC=1A 3A 2A 4A, specification Silicon Diffused Power Transistor 10 Zth / (K/W) BUT11APX BU1706AX VCC 0.5 1īUT11APX BUT11APX equivalent BUT11APX transistor but11apx data sheet but11apx BUT-11apxĪbstract: BUT11APX but11apx1200 BUT11APX-1200 DSA00169240 ![]() Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT11APX -1200 Silicon Diffused Power Transistor Product, BUT11APX -1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed, BUT11APX -1200 ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 Â☌ unless otherwise specified SYMBOL, Transistor BUT11APX -1200 + 50v 100-200R IC 90 % ICsat 90 % 10 % Horizontal Oscilloscope, BUT11APX -1200 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1.4 1.2 1.0īUT11APX-1200 BUT11APX-1200 771-BUT11APX-1200127 BUT11APX BUT11Ībstract: BUT11APX transistor but11apx data sheet but11apx BUT-11apx BUT11APX equivalent Datasheets Context Search Catalog Datasheet ![]()
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